The International Memory Workshop (IMW) will take place from 15th to 18th May 2022 at Taschenbergpalais Palais Hotel in Dresden (Germany).
This 14th conference, organized by IEEE International LLC, brings the memory community together in a workshop environment to discuss the memory process and design technologies, applications, market needs and strategies.
StorAIge partners, Fraunhofer-IPMS, CEA and XFAB will present their latest results obtained within the project:
“Integration of BEoL compatible 1T-1C FeFET memory cells into an established technology” D. Lehninger et al.
Abstract: Recently, hafnium oxide based ferroelectric memories gained great attention due to good scalability, high speed operation, and low power consumption. In contrast to the FRAM concept, the FeFET offers non-destructive read-out. However, the integration of the FeFET into an established CMOS technology entails several challenges. Herein, an 1T1C FeFET with separated transistor (1T) and ferroelectric capacitor (1C) is described and demonstrated. This alternative approach can be integrated into standard process technologies without introducing significant modifications of the front-end-of-line. All important steps starting from the integration of MFM devices into the BEoL through the fabrication and characterization of single 1T1C memory cells with various capacitor area ratios for bit cell tuning up to the initial demonstration of an 8 kbit test-array are covered.
“Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability”. T. Ali et al.
Abstract: Study on the effect of nanosecond laser anneal (NLA) induced crystallization of ferroelectric (FE) Si-doped hafnium oxide (HSO) material is reported. The laser energy density (0.3 J/cm2 to 1.3 J/cm2) and pulse count (1.0 to 30) variations are explored as pathways for the HSO based metal-ferroelectric-metal (MFM) capacitors. The increase in energy density shows transition toward ferroelectric film crystallization monitored by the remanent polarization (2Pr) and coercive field (2Ec). The NLA conditions show maximum 2Pr (~ 24 μC/cm2) comparable to the values obtained from reference rapid thermal processing (RTP). Reliability dependence in terms of fatigue (107 cycles) of MFMs on NLA versus RTP crystallization anneal is highlighted. The NLA based MFMs shows improved fatigue cycling at high fields for the low energy densities compared to an RTP anneal. The maximum fatigue cycles to breakdown shows a characteristic dependence on the laser energy density and pulse count. Leakage current and dielectric breakdown of NLA based MFMs at the transition of amorphous to crystalline film state is reported. The role of NLA based anneal on ferroelectric film crystallization and MFM stack reliability is reported in reference with conventional RTP based anneal.
More information: https://www.ewh.ieee.org/soc/eds/imw/