Exploring Deep Learning for Adaptive Energy Detection Threshold Determination: A Multistage Approach
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2023 Electronics 12, no. 19: 4183 – https://doi.org/10.3390/electronics12194183
ASIL-D Automotive-Grade Microcontroller in 28nm FD-SOI with Full-OTA Capable 21MB Embedded PCM Memory and Highly Scalable Power Management
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Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
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Scientific reports 2024, 14, 1122 – https://doi.org/10.1038/s41598-023-49924-2
Impact of Non-Stoichiometric Phases and Grain Boundarieson the Nanoscale Forming and Switching of HfOxThinFilms
Niclas Schmidt, Nico Kaiser, Tobias Vogel, Eszter Piros, Silvia Karthäuser, Rainer Waser,Lambert Alff, and Regina Dittmann
Advanced Electronic Materials 2024, 2300693 – https://doi.org/10.1002/aelm.202300693
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Cyber-WISE: A Cyber-Physical Deep Wireless Indoor Positioning System and Digital Twin Approach
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Sensors 2023, 23, 9903 – https://doi.org/10.3390/s23249903
Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell
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A study on imprint behavior of ferroelectric hafnium oxide caused by high-temperature annealing
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MindReader: Unsupervised Classification of Electroencephalographic Data
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APL Machine Learning 1, 036104 (2023) – https://doi.org/10.1063/5.0143926
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ACS Applied Electronic Materials 2023, 5, 2, 754–763 – https://doi.org/10.1021/acsaelm.2c01255
Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices
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Decoding Algorithms and HW Strategies to Mitigate Uncertainties in a PCM-Based Analog Encoder for Compressed Sensing
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Combined HW/SW Drift and Variability Mitigation for PCM-based Analog In-memory Computing for Neural Network Applications
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Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks
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RSS-Based Wireless LAN Indoor Localization and Tracking Using Deep Architectures
Muhammed Zahid Karakusak,Hasan Kivrak, Hasan Fehmi Ates and Mehmet Kemal Ozdemir
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Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio
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IEEE Electron Device Letters ( Volume: 43, Issue: 11, November 2022) – doi: 10.1109/LED.2022.3204360
Review on the Microstructure of Ferroelectric Hafnium Oxides
Lederer, M., Lehninger, D., Ali, T. and Kämpfe, T.
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A generalizable, uncertainty-aware neural network potential for GeSbTe with Monte Carlo dropout
Sung-Ho Lee, Valerio Olevano, Benoit Sklénard
Solid-State Electronics Volume 199, January 2023, 108508 – https://doi.org/10.1016/j.sse.2022.108508
Integration of labeled 4D-STEM SPED data for confirmation of phase identification
T. Vogel, A. Zintler, N. Kaiser, N. Guillaume, G. Lefèvre, M. Lederer, A. L. Serra, E. Piros, T. Kim, P. Schreyer, R. Winkler, D. Nasiou, R. R. Olivo, T. Ali, D. Lehninger, A. Arzumanov, C. Charpin-Nicolle, G. Bourgeois, L. Grenouillet, MC. Cyrille, G. Navarro, K. Seidel, T. Kämpfe, S. Petzold, C. Trautmann, L. Molina-Luna, L. Alff
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Controlling the Formation of Conductive Pathways in Memristive Devices
Robert Winkler, Alexander Zintler, Stefan Petzold, Eszter Piros, Nico Kaiser, Tobias Vogel, Déspina Nasiou, Keith P. McKenna, Leopoldo Molina-Luna, Lambert Alff
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Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia
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Structural and electrical response of emerging memories exposed to heavy ion radiation
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ACS Nano 2022, 16, 9, 14463–1447 – https://doi.org/10.1021/acsnano.2c04841
Impact of Ferroelectric Layer Thickness on Reliability of Back-End-of-Line-Compatible Hafnium Zirconium Oxide Films
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Enhanced Conductivity and Microstructure in Highly Textured TiN1−x/c‑Al2O3 Thin Films
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ACS Omega 2022, 7, 2041−2048 – https://doi.org/10.1021/acsomega.1c05505
Sub 10-nm ferroelectric Gd-doped HfO2 Layers
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Alexander Zintler, Robert Eilhardt, Stefan Petzold, Sankaramangalam Ulhas Sharath, Enrico Bruder, Nico Kaiser, Lambert Alff, and Leopoldo Molina-Luna
ACS Omega 2022, 7, 2041−2048 – https://doi.org/10.1021/acsomega.1c05505
Fluorite-Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
Faizan Ali,Tarek Ali,David Lehninger,Ayse Sünbül,Alison Viegas,Ridham Sachdeva,Akmal Abbas,Malte Czernohorsky,Konrad Seidel
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Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties
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ACS Appl. Mater. Interfaces 2022, 14, 1290−1303 – https://doi.org/10.1021/acsami.1c09451