Two recent works on emerging memory materials exposed to heavy ion radiation were published in ACS Nano and Journal of Applied Physics. These publications have been prepared by TU Darmstadt, CEA LETI and CNRS-LTM (Université Grenoble Alpes)) and Fraunhofer IPMS in the framework of the European Projects WAKeMeUP and StorAIge.
The experiments reveal that irradiation-induced effects in hafnium oxide- and GeSbTe-based memory materials strongly depend on the initial crystallinity and composition of the active layers. Our experimental approach combining nonlocal and local characterization with electrical investigations provides important groundwork for investigations of irradiated digital but also analog memristive devices in future.
Structural and electrical response of emerging memories exposed to heavy ion radiation
T. Vogel et al. ACS Nano (2022) – doi: 10.1021/acsnano.2c04841
Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia
M. Lederer et al. Journal of Applied Physics 132, 064102 (2022) doi: 10.1063/5.0098953
Integration of labeled 4D-STEM SPED data for confirmation of phase identification
T. Vogel,et al. TUdatalib (2022) – doi: 10.48328/tudatalib-896